Thank you for your interest in Fujitsu Microelectronics Ltd part number MB8464-15CV-W-SC, a Microcircuit Memory item that we offer here on Aerospace Materials Supply. This product is listed with the NSN 5962-01-421-1336, and you can obtain customized procurement solutions on this component from our team members by completing and submitting the form below. For our specialists to best deliver quotes that accommodate your specifications, please be sure we are presented with essential details like your target price, desired quantity, and anticipated fulfillment timeline. Once we have the opportunity to receive and review your submission, we will strive to provide a tailored response for your consideration within 15 minutes or less.
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Besides part number MB8464-15CV-W-SC, you may browse our platform further for similar components produced by Fujitsu Microelectronics Ltd under the CAGECode 61271, as well as additional products that are categorized under FSC 5962 Microcircuits Electronic. If you have any questions regarding our services or the NSN 5962-01-421-1336 items that we sell, you may always give us a call or email, as we would be delighted to assist you in any way that we can. Otherwise, we encourage you to request a quote for part number MB8464-15CV-W-SC at your earliest convenience.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-421-1336 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014211336 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| MB8464-15CV-W-SC | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| NHCF | Nuclear Hardness Critical Feature | HARDENED |
| CZEQ | Time Rating Per Chacteristic | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| MRC | Decoded Requirement | Clear Text Reply |
| AEHX | Maximum Power Dissipation Rating | 495.0 MILLIWATTS |
| CQSJ | Inclosure Material | CERAMIC |
| TTQY | Terminal Type And Quantity | 32 LEADLESS |
| CBBL | Features Provided | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER |
| CWSG | Terminal Surface Treatment | SOLDER |
| CQSZ | Inclosure Configuration | LEADED CHIP CARRIER |
| AFGA | Operating Temp Range | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | Storage Temp Range | -65.0 TO 150.0 DEG CELSIUS |
| CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER | Memory Device Type | RAM |
| CZEN | Voltage Rating And Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
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