Thank you for your interest in Harnischfeger Corp part number 5309-1N, a Microcircuit Set item that we offer here on Aerospace Materials Supply. This product is listed with the NSN 5962-01-363-0915, and you can obtain customized procurement solutions on this component from our team members by completing and submitting the form below. For our specialists to best deliver quotes that accommodate your specifications, please be sure we are presented with essential details like your target price, desired quantity, and anticipated fulfillment timeline. Once we have the opportunity to receive and review your submission, we will strive to provide a tailored response for your consideration within 15 minutes or less.
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Besides part number 5309-1N, you may browse our platform further for similar components produced by Harnischfeger Corp under the CAGECode 56010, as well as additional products that are categorized under FSC 5962 Microcircuits Electronic. If you have any questions regarding our services or the NSN 5962-01-363-0915 items that we sell, you may always give us a call or email, as we would be delighted to assist you in any way that we can. Otherwise, we encourage you to request a quote for part number 5309-1N at your earliest convenience.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-8769001RA | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
| CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CBBL | FEATURES PROVIDED | PROGRAMMED |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
| CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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