Thank you for your interest in Samsung Semiconductor Inc part number K6T1008C2EDB7000, a Microcircuit Memory item that we offer here on Aerospace Materials Supply. This product is listed with the NSN 5962-01-408-2869, and you can obtain customized procurement solutions on this component from our team members by completing and submitting the form below. For our specialists to best deliver quotes that accommodate your specifications, please be sure we are presented with essential details like your target price, desired quantity, and anticipated fulfillment timeline. Once we have the opportunity to receive and review your submission, we will strive to provide a tailored response for your consideration within 15 minutes or less.
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Besides part number K6T1008C2EDB7000, you may browse our platform further for similar components produced by Samsung Semiconductor Inc under the CAGECode 0DUN9, as well as additional products that are categorized under FSC 5962 Microcircuits Electronic. If you have any questions regarding our services or the NSN 5962-01-408-2869 items that we sell, you may always give us a call or email, as we would be delighted to assist you in any way that we can. Otherwise, we encourage you to request a quote for part number K6T1008C2EDB7000 at your earliest convenience.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-408-2869 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014082869 | N | B | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| B | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| UPD431000ACZ-70L | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)" |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)" |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
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