Request a Quote on Part Number 1Z150-M with the NSN 5961-01-239-7745 by Toshiba Syouji

Part Number: 1Z150-M

Alternate P/N: 1Z150M

Manufacturer: Toshiba Syouji

NSN: 5961-01-239-7745

NIIN: 012397745

Item Name : Semiconductor Device Diode

CAGE Code: S5339

FSC: 5961 Semiconductor Devices and Associated Hardware

FSG: 59 Electrical and Electronic Equipment Components

Country : USA

NCB Code : 01

Thank you for your interest in Toshiba Syouji part number 1Z150-M, a Semiconductor Device Diode item that we offer here on Aerospace Materials Supply. This product is listed with the NSN 5961-01-239-7745, and you can obtain customized procurement solutions on this component from our team members by completing and submitting the form below. For our specialists to best deliver quotes that accommodate your specifications, please be sure we are presented with essential details like your target price, desired quantity, and anticipated fulfillment timeline. Once we have the opportunity to receive and review your submission, we will strive to provide a tailored response for your consideration within 15 minutes or less.

Note : We Will Not Share Your Information To Any Third Parties.

Product Details

“*” Required Fields Are Compulsory

Contact Information

* By clicking this box, I acknowledge that I have read and accept the ASAP Semiconductor Terms and Conditions and agree that all quotes and purchase orders are exclusively subject to the ASAP Semiconductor Terms and Conditions.

I consent to receive email communications from ASAP Semiconductor and can unsubscribe at any time.
ASAP Semiconductor is a wholly independent aftermarket parts distributor.
This website is intended for quotations based on part numbers only. Please DO NOT submit drawings, technical data, or other specifications through this portal.

Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-conditions.aspx . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

Upload RFQ SHEET

If you have more than one item, upload your spreadsheet here

Upload File

Besides part number 1Z150-M, you may browse our platform further for similar components produced by Toshiba Syouji under the CAGECode S5339, as well as additional products that are categorized under FSC 5961 Semiconductor Devices and Associated Hardware. If you have any questions regarding our services or the NSN 5961-01-239-7745 items that we sell, you may always give us a call or email, as we would be delighted to assist you in any way that we can. Otherwise, we encourage you to request a quote for part number 1Z150-M at your earliest convenience.

NSN Information for Part Number 1Z150-M with NSN 5961-01-239-7745, 5961012397745

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5961-01-239-7745 Item PartTypeName: SEMICONDUCTOR DEVICE,DIODE	5961	012397745	0	N
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U			A
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
1Z150-M	2	9	5

Characteristics Data of NSN 5961-01-239-7745, 5961012397745

MRC	Criteria	Characteristic
ABHP	OVERALL LENGTH	6.0 MILLIMETERS MAXIMUM
ABJT	TERMINAL LENGTH	30.0 MILLIMETERS NOMINAL
ADAV	OVERALL DIAMETER	3.0 MILLIMETERS NOMINAL
AGAV	END ITEM IDENTIFICATION	6625-01-146-5801 OSCILLDSCOPE
AXGY	MOUNTING METHOD	TERMINAL
CBBL	FEATURES PROVIDED	HERMETICALLY SEALED CASE
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	156.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
CTQX	CURRENT RATING PER CHARACTERISTIC	2.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
CTRD	POWER RATING PER CHARACTERISTIC	1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 DEG CELSIUS JUNCTION
MATT	MATERIAL	GLASS INCLOSURE
MATT	MATERIAL	SILICON SEMICONDUCTOR
TTQY	TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD